KSC5024RTU ,NPN Silicon TransistorKSC5024KSC5024High Voltage and High Reliabilty• High Speed Switching•Wide SOATO-3P11.Base 2.Colle ..
KSC5026MOS ,NPN Silicon TransistorKSC5026MKSC5026MHigh Voltage and High Reliability High Speed SwitchingWide SOATO-12611. Emitter ..
KSC5026MOS ,NPN Silicon TransistorKSC5026MKSC5026MHigh Voltage and High Reliability High Speed SwitchingWide SOATO-12611. Emitter ..
KSC5027 ,NPN Silicon TransistorKSC5027KSC5027High Voltage and High Reliability• High Speed Switching•Wide SOATO-22011.Base 2.Co ..
KSC5027FRTU ,NPN Silicon TransistorKSC5027FKSC5027FHigh Voltage and High Reliability High Speed Switching Wide SOATO-220F11.Base ..
KSC5027FRTU ,NPN Silicon TransistorKSC5027FKSC5027FHigh Voltage and High Reliability High Speed Switching Wide SOATO-220F11.Base ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
L9332 ,Quad Intelligent Power Low Side SwitchFeaturesThe L9332 is a monolithic integrated quad low A Quad power low side driver with 3output s ..
KSC5024RTU
NPN Silicon Transistor
KSC5024 KSC5024 High Voltage and High Reliabilty • High Speed Switching •Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter- Base Voltage 7 V EBO I Collector Current (DC) 10 A C I Collector Current (Pulse) 20 A CP I Base Current 3 A B P Collector Dissipation (T =25°C) 90 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 800 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 500 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 7 V EBO E C V (sus) Collector-Emitter Sustaining Voltage I = 3.5A, I =-I =1.4A 500 V CEX C B1 B2 L = 500μH, Clamped I Collector Cut-off Current V = 500V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 0.8A 15 50 FE1 CE C h V =5V, I = 4A 8 FE2 CE C V (Sat) Collector-Emitter Saturation Voltage I = 4A, I = 0.8A 1 V CE C B V (Sat) Base-Emitter Saturation Voltage I = 4A, I = 0.8A 1.5 V BE C B C Output Capacitance V = 10V, I =0, f = 1MHz 120 pF ob CB E f Current Gain Bandwidth Product V = 10V, I =0.8A 18 MHz T CE C t Turn ON Time V = 200V 0.5 μs on CC I = 5I =-2.5I =5A t Storage Time C B1 B2 3 μs s R = 40Ω L t Time Fall Time 0.3 μs f h Classificntion FE Classification R O Y h 15 ~ 30 20 ~ 40 30 ~ 50 FE1 ©2001 Rev. A1, June 2001
