KSC3953 ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
KSC3953 ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
KSC3953 ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
KSC3953-C-STU ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
KSC3953-C-STU ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
KSC3953-C-STU ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3953
NPN Epitaxial Silicon Transistor
KSC3953 KSC3953 CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.) T High Collector-Emitter Voltage : V =120V CEO Low Reverse Transfer Capacitance : C =1.7pF(Typ.) re TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current (DC) 200 mA C I Collector Current (Pulse) 400 mA CP P Collector Dissipation (T =25°C) 1.3 W C a P Collector Dissipation (T =25°C) 8 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 10μA, I = 0 120 V CBO C B BV Collector-Emitter Breakdown Voltage I = 1mA, R = ∞ 120 V EBO C BE BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 3 V EBO E C I Collector Cut-off Current V = 80V, I = 0 0.1 μA CBO CB E I Emitter Cut-off Current V = 2V, I = 0 1.0 μA EBO EB C h DC Current Gain V = 10V, I = 10mA 40 120 FE1 CE C h V = 10V, I = 100mA 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 30mA, I = 3mA 1.0 V CE C B V (sat) Base-Emitter Saturation Voltage I = 30mA, I = 3mA 1.0 V BE C B f Current Gain Bandwidth Product V = 10V,I = 50mA 400 MHz T CE C C Output Capacitance V = 30V, f = 1MHz 2.1 pF ob CB C Reverse Transfer Capacitance V = 30V, f = 1MHz 1.7 pF re CB h Classificntion FE Classification C D h 40 ~ 80 60 ~ 120 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
