KSC3552OTU ,NPN Silicon TransistorKSC3552KSC3552High Voltage and High Reliabilty• High Speed Switching•Wide SOATO-3P11.Base 2.Colle ..
KSC388 ,NPN (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
KSC3953 ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
KSC3953 ,NPN Epitaxial Silicon TransistorKSC3953KSC3953CRT Display Video Output High Current Gain Bandwidth Product : f =400MHz(Typ.)T Hig ..
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L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
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L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
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KSC3552OTU
NPN Silicon Transistor
KSC3552 KSC3552 High Voltage and High Reliabilty • High Speed Switching •Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1100 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 30 A CP I Base Current 6 A B P Collector Dissipation (T =25°C) 150 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 1100 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 800 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 7 V EBO E C V (sus) Collector-Emitter Sustaining Voltage I = 6A, I = -I = 1.2A 800 V CEX C B1 B2 L = 500μH, Clamped I Collector Cut-off Current V = 800V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 0.8A 10 40 FE1 CE C h V = 5V, I = 4A 8 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 6A, I = 1.2A 2 V CE C B V (sat) Base-Emitter Saturation Voltage I = 6A, I = 1.2A 1.5 V BE C B C Output Capacitance V = 10V, f = 1MHz 215 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.8A 15 MHz T CE C t Turn ON Time V = 400V 0.5 μs ON CC 51 = -2.5I = I = 8A t Storage Time B1 B2 C 3 μs STG R = 50Ω L t Fall Time 0.3 μs F h Classificntion FE Classification N R O h 10 ~ 20 15 ~ 30 20 ~ 40 FE ©2001 Rev. A1, June 2001
