KSC3502 ,NPN Epitaxial Silicon TransistorKSC3502KSC3502CRT Display, Video Output High Voltage : V =200VCEO Low Reverse Transfer Capacitanc ..
KSC3502 ,NPN Epitaxial Silicon TransistorKSC3502KSC3502CRT Display, Video Output High Voltage : V =200VCEO Low Reverse Transfer Capacitanc ..
KSC3502 ,NPN Epitaxial Silicon TransistorKSC3502KSC3502CRT Display, Video Output High Voltage : V =200VCEO Low Reverse Transfer Capacitanc ..
KSC3502-E , CRT Display, Video Output
KSC3503 ,NPN Epitaxial Silicon TransistorKSC3503KSC3503CRT Display, Video Output High Voltage : V =300VCEO Low Reverse Transfer Capacitanc ..
KSC3503 ,NPN Epitaxial Silicon TransistorKSC3503KSC3503CRT Display, Video Output High Voltage : V =300VCEO Low Reverse Transfer Capacitanc ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3502
NPN Epitaxial Silicon Transistor
KSC3502 KSC3502 CRT Display, Video Output High Voltage : V =200V CEO Low Reverse Transfer Capacitance: C =1.2pF @ V =30V re CB TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 200 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 100 mA C I Collector Current (Pulse) 200 mA CP P Collector Dissipation (T =25°C) 5 W C C P Collector Dissipation (T =25°C) 1.2 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 10μA, I = 0 200 V CBO C E BV Collector-Emitter Breakdown Voltage I = 1mA, I = 0 200 V CEO C B BV Emitter-Base Breakdown Voltage I = 10μA, I = 0 5 V EBO E C I Collector Cut-off Current V = 150V, I = 0 0.1 μA CBO CB E I Emitter Cut-off Current V = 4V, I = 0 0.1 μA EBO EB C h DC Current Gain V = 10V, I = 10mA 40 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 20mA, I = 2mA 0.6 V CE C B V (sat) Base-Emitter Saturation Voltage I = 20mA, I = 2mA 1 V BE C B f Current Gain Bandwidth Product V = 30V, I = 10mA 150 MHz T CE C C Output Capacitance V = 30V, f= 1MHz 1.7 pF ob CB C Reverse Transfer Capacitance V = 30V, f= 1MHz 1.2 pF re CB h Classification FE Classification C D E F h 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
