KSC3296 ,NPN Epitaxial Silicon TransistorApplications Complement to KSA1304TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon ..
KSC3296YTU ,NPN Epitaxial Silicon TransistorKSC3296KSC3296Power Amplifier
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KSC3502 ,NPN Epitaxial Silicon TransistorKSC3502KSC3502CRT Display, Video Output High Voltage : V =200VCEO Low Reverse Transfer Capacitanc ..
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L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
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L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3296
NPN Epitaxial Silicon Transistor
KSC3296 KSC3296 Power Amplifier Applications Complement to KSA1304 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current(DC) 1.5 A C I Base Current 0.5 A B P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 120V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 10V, I = 500mA 40 75 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 1.5 V CE C B V (on) Base-Emitter ON Voltage V = 10V, I = 500mA 0.65 0.75 0.85 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 4 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 35 pF ob CB ©2000 Fairchild Semiconductor International Rev. A, February 2000
