KSC3233 ,NPN Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233DTF ,Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233DTF ,Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233-DTF ,Triple Diffused Planar Silicon TransistorKSC3233KSC3233High Speed Switching• Low Collector-Emitter Saturation Voltage• High speed Switching ..
KSC3265YMTF ,NPN Epitaxial Silicon TransistorKSC3265KSC3265Low Frequency Amplifier3• Complement to KSA129821SOT-231. Base 2. Emitter 3. Coll ..
KSC3265-Y-MTF ,NPN Epitaxial Silicon TransistorKSC3265KSC3265Low Frequency Amplifier3• Complement to KSA129821SOT-231. Base 2. Emitter 3. Coll ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3233
NPN Triple Diffused Planar Silicon Transistor
KSC3233 KSC3233 High Speed Switching • Low Collector-Emitter Saturation Voltage • High speed Switching : t =1μs (Max.) @ I =0.8A F C • Collector-Emitter Voltage : V =400V CEO • Lead formed for Surface Mount Applications (D-PAK, “ -D “ Suffix) 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 2 A C I Base Current 0.5 A B P Collector Dissipation (T =25°C) 20 W C C P Collector Dissipation (T =25°C) 1 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 500 V CEO C E BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 400 V CEO C B I Collector Cut-off Current V = 400V, I = 0 100 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 1 mA EBO EB C h DC Current Gain V = 5V, I = 0.1A 20 FE1 CE C h V = 5V, I = 1A 8 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 0.2A 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = 1A, I = 0.2A 1.5 V BE C B t Turn ON Time V = 200V, I = 0.8A 1 μs ON CC C 1 = -I = 0.08A t Storage Time B1 B2 2.5 μs STG R = 250Ω L t Fall Time 1 μs F ©2001 Rev. A1, June 2001
