KSC3123YMTF ,NPN Epitaxial Silicon TransistorKSC3123KSC3123Mixer for UHF TV Tuner3•G =23dBCE•C =0.4pFRE21SOT-231. Base 2. Emitter 3. Collect ..
KSC3233 ,NPN Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233DTF ,Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233DTF ,Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233-DTF ,Triple Diffused Planar Silicon TransistorKSC3233KSC3233High Speed Switching• Low Collector-Emitter Saturation Voltage• High speed Switching ..
KSC3265YMTF ,NPN Epitaxial Silicon TransistorKSC3265KSC3265Low Frequency Amplifier3• Complement to KSA129821SOT-231. Base 2. Emitter 3. Coll ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3123YMTF
NPN Epitaxial Silicon Transistor
KSC3123 KSC3123 Mixer for UHF TV Tuner 3 •G =23dB CE •C =0.4pF RE 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current 50 mA C I Base Current 25 mA B P Collector Power Dissipation 150 mW C T Junction Temperature 1500 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =1mA, I =0 20 V CEO C B I Collector Cut-off Current V =25V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 1 μA EBO EB C h DC Current Gain V =10V, I =5mA 60 240 FE CE C f Current Gain Bandwidth Product V =10V, I=5mA 9001400 MHz T CE C C Reverse Transfer Capacitance V =10V, I =0, f=1MHz 0.4 0.5 pF RE CB E G Conversion Gain V =12V, f=200MHz 20 23 dB CE CC f =260MHz L NF Output Capacitance V =12V, f=200MHz, 3.8 5.5 dB CE f =260MHz L h Classification FE Classification R O Y h 60 ~ 120 90 ~ 180 120 ~ 240 FE Marking HAO h grade FE ©2002 Rev. A2, September 2002
