KSC3076YTU ,NPN Epitaxial Silicon TransistorApplications Low Collector-Emitter Saturation Voltage Complement to KSA 12411I-PACK1. Base 2. C ..
KSC3076-YTU ,NPN Epitaxial Silicon TransistorKSC3076KSC3076Power Amplifier
KSC3123YMTF ,NPN Epitaxial Silicon TransistorKSC3123KSC3123Mixer for UHF TV Tuner3•G =23dBCE•C =0.4pFRE21SOT-231. Base 2. Emitter 3. Collect ..
KSC3233 ,NPN Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233DTF ,Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
KSC3233DTF ,Triple Diffused Planar Silicon TransistorApplications (D-PAK, “ -D “ Suffix)1I-PAK1. Base 2. Collector 3. EmitterNPN Triple Diffused Pla ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3076YTU-KSC3076-YTU
NPN Epitaxial Silicon Transistor
KSC3076 KSC3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage Complement to KSA 1241 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 2 A C I Base Current 1 A B P Collector Dissipation (T =25°C) 1 W C a P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 50 V CEO C B I Collector Cut-off Current V = 50V, I = 0 1 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 1 μA EBO EB C h DC Current Gain V = 2V, I = 0.5A 70 240 FE1 CE C h V = 2V, I = 1.5A 40 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 0.05A 0.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = 1A, I = 0.05A 1.2 V BE C B f Current Gain Bandwidth Product V = 2V, I = 0.5A 100 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 30 pF ob CB t Turn ON Time V = 30V, I = 1A 0.1 μs ON CC C 1 = - I = 0.05A t Storage Time B1 B2 1 μs STG R = 30Ω L t Fall Time 0.1 μs F h Classification FE1 Classification O Y h 70 ~ 140 120 ~ 240 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
