KSC2982 ,NPN Epitaxial Silicon TransistorKSC2982KSC2982Strobe Flash & Medium Power Amplifier Excellent h Linearity : h =140 ~ 600FE FE1 Lo ..
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KSC3123YMTF ,NPN Epitaxial Silicon TransistorKSC3123KSC3123Mixer for UHF TV Tuner3•G =23dBCE•C =0.4pFRE21SOT-231. Base 2. Emitter 3. Collect ..
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L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
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L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
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KSC2982
NPN Epitaxial Silicon Transistor
KSC2982 KSC2982 Strobe Flash & Medium Power Amplifier Excellent h Linearity : h =140 ~ 600 FE FE1 Low Collector-Emitter Saturation Voltage : V (sat)=0.5V CE Collector Dissipation : P =1~2W in Mounted on Ceramic Board C SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CES V Collector-Emitter Voltage 10 V CEO V Emitter Base Voltage 6 V EBO I Collector Current (DC) 2 A C I * Collector Current (Pulse) 4 A CP I Base Current (DC) 0.4 A B I * Base Current (Pulse) 0.8 A BP P Collector Power Dissipation 500 mW C P * 1,000 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤30% 2 Mounted on Ceramic Board (250mm x0.8mm) Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =10mA, I =0 10 V CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I =0 6 V EBO E C I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =6V, I =0 100 nA EBO BE C h DC Current Gain V =1V, I =0.5A 140 600 FE1 CE C h V =1V, I =2A 70 140 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =2A, I =50mA 0.2 0.5 V CE C B V (on) Base-Emitter On Voltage V =1V, I =2A 0.86 1.5 V BE CE C f Current Gain Bandwidth Product V =1V, I =2A 150 MHz T CE C Output Capacitance V =10V, I =0, f=1MHz 27 pF C CB E ob h Classification FE1 Classification A B C D h 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 FE1 Marking SSX h grade FE ©2003 Rev. A3, February 2003
