KSC2883 ,NPN Epitaxial Silicon TransistorKSC2883KSC2883Low Frequency Power Amplifier• 3W Output Application• Collector Dissipation : P =1~2W ..
KSC2883OTF ,NPN Epitaxial Silicon TransistorKSC2883KSC2883Low Frequency Power Amplifier• 3W Output Application• Collector Dissipation : P =1~2W ..
KSC2883YTF ,NPN Epitaxial Silicon TransistorKSC2883KSC2883Low Frequency Power Amplifier• 3W Output Application• Collector Dissipation : P =1~2W ..
KSC2982 ,NPN Epitaxial Silicon TransistorKSC2982KSC2982Strobe Flash & Medium Power Amplifier Excellent h Linearity : h =140 ~ 600FE FE1 Lo ..
KSC3076YTU ,NPN Epitaxial Silicon TransistorApplications Low Collector-Emitter Saturation Voltage Complement to KSA 12411I-PACK1. Base 2. C ..
KSC3076-YTU ,NPN Epitaxial Silicon TransistorKSC3076KSC3076Power Amplifier
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2883
NPN Epitaxial Silicon Transistor
KSC2883 KSC2883 Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : P =1~2W in Mounted on Ceramic Board C • Complement to KSA1203 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C I Base Current 0.3 A B P Collector Power Dissipation 500 mW C P * 1,000 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG 2 * Mounted on Ceramic Board (250mm x0.8mm) Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =10μA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I =0 5 V EBO E C I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 100 nA EBO BE C h DC Current Gain V =2V, I =500mA 100 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I =1.5A, I =30mA 2.0 V CE C B V (on) Base-Emitter On Voltage V =2V, I =500mA 1.0 V BE CE C f Current Gain Bandwidth Product V =2V, I =500mA 120 MHz T CE C Output Capacitance V =10V, I =0, f=1MHz 40 pF C CB E ob h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE Marking SHX h grade FE ©2001 Rev. A1, June 2001
