KSC2881YTF ,NPN Epitaxial Silicon TransistorKSC2881KSC2881Power Amplifier• Collector-Emitter Voltage : V =120VCEO• Current Gain Bandwidth Produ ..
KSC2881-YTF ,NPN Epitaxial Silicon TransistorKSC2881KSC2881Power Amplifier• Collector-Emitter Voltage : V =120VCEO• Current Gain Bandwidth Produ ..
KSC2883 ,NPN Epitaxial Silicon TransistorKSC2883KSC2883Low Frequency Power Amplifier• 3W Output Application• Collector Dissipation : P =1~2W ..
KSC2883OTF ,NPN Epitaxial Silicon TransistorKSC2883KSC2883Low Frequency Power Amplifier• 3W Output Application• Collector Dissipation : P =1~2W ..
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KSC2982 ,NPN Epitaxial Silicon TransistorKSC2982KSC2982Strobe Flash & Medium Power Amplifier Excellent h Linearity : h =140 ~ 600FE FE1 Lo ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
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L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2881-KSC2881YTF-KSC2881-YTF
NPN Epitaxial Silicon Transistor
KSC2881 KSC2881 Power Amplifier • Collector-Emitter Voltage : V =120V CEO • Current Gain Bandwidth Productor : f =120MHz T • Collector Dissipation : P =1~2W in Mounted on Ceramic Board C • Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 800 mA C I Base Current 160 mA B P Collector Power Dissipation 500 mW C P * 1,000 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG 2 * Mounted on Ceramic Board (250mm x0.8mm) Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =10μA, I =0 120 V CEO C B BV Emitter-Base Breakdown Voltage I =1mA, I =0 5 V EBO E C I Collector Cut-off Current V =120V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 100 nA EBO BE C h DC Current Gain V =5V, I =100mA 80 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 1.0 V CE C B V (on) Base-Emitter On Voltage V =5V, I =500mA 1.0 V BE CE C f Current Gain Bandwidth Product V =5V, I =100mA 120 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 30 pF ob CB E h Classification FE Classification O Y h 80 ~ 160 120 ~ 240 FE Marking SCX h grade FE ©2002 Rev. A2, September 2002
