KSC2859-OMTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2859YMTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2859-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2859-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2881 ,NPN Epitaxial Silicon TransistorKSC2881KSC2881Power Amplifier• Collector-Emitter Voltage : V =120VCEO• Current Gain Bandwidth Produ ..
KSC2881YTF ,NPN Epitaxial Silicon TransistorKSC2881KSC2881Power Amplifier• Collector-Emitter Voltage : V =120VCEO• Current Gain Bandwidth Produ ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2859OMTF-KSC2859-OMTF-KSC2859YMTF-KSC2859-Y-MTF
NPN Epitaxial Silicon Transistor
KSC2859 KSC2859 Low Frequency Power Amplifier • Complement to KSA1182 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =35V, I =0 0.1 μA CEO CB E I Emitter Cut-off Current V =5V, I =0 0.1 μA EBO EB C h DC Current Gain V =1V, I =100mA 70 240 FE1 CE C h V =6V, I =400mA 25 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.1 0.25 V CE C B V (on) Base-Emitter On Voltage V =1V, I=100mA 0.81.0V BE CE C f Current Gain-Bandwidth Product V =6V, I=20mA 300 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 7 pF ob CB E h Classification FE1 Classification O Y h 70 ~ 140 120 ~ 240 FE1 Marking E1O h grade FE ©2002 Rev. A2, September 2002
