KSC2757-OMTF ,NPN Epitaxial Silicon TransistorKSC2757KSC2757Mixer Oscillator for VHF Tuner• High Current Gain Bandwidth Product : f =1100MHz (TYP ..
KSC2757RMTF ,NPN Epitaxial Silicon TransistorKSC2757KSC2757Mixer Oscillator for VHF Tuner• High Current Gain Bandwidth Product : f =1100MHz (TYP ..
KSC2757YMTF ,NPN Epitaxial Silicon TransistorKSC2757KSC2757Mixer Oscillator for VHF Tuner• High Current Gain Bandwidth Product : f =1100MHz (TYP ..
KSC2757-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2757KSC2757Mixer Oscillator for VHF Tuner• High Current Gain Bandwidth Product : f =1100MHz (TYP ..
KSC2785YTA ,NPN Epitaxial Silicon TransistorKSC2785KSC2785Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA1175• Collector-Bas ..
KSC2859OMTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2757-OMTF-KSC2757RMTF-KSC2757YMTF-KSC2757-Y-MTF
NPN Epitaxial Silicon Transistor
KSC2757 KSC2757 Mixer Oscillator for VHF Tuner • High Current Gain Bandwidth Product : f =1100MHz (TYP) 3 T 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 15 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ +150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =12V, I =0 0.1 μA CBO CB E h DC Current Gain V =10V, I =5mA 60 120 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I=1mA 0.5V CE C B f Current Gain Bandwidth Product V =10V, I=5mA 8001100 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 1.5 pF ob CB E C Noise Figure V =10V, I =5mA 10 1.5 ps c·rbb’ CE C f=31.9MHz h Classification FE Classification R O Y h 60 ~ 120 90 ~ 180 120 ~ 240 FE Marking H3O h grade FE ©2002 Rev. A2, September 2002
