KSC2755OMTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
KSC2755-O-MTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
KSC2755YMTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
KSC2755-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
KSC2756YMTF ,NPN Epitaxial Silicon TransistorKSC2756KSC2756Mixer for VHF TV Tuner• High Conversion Gain : G = 23dB (TYP.)3CE21SOT-231. Base 2. ..
KSC2757-OMTF ,NPN Epitaxial Silicon TransistorKSC2757KSC2757Mixer Oscillator for VHF Tuner• High Current Gain Bandwidth Product : f =1100MHz (TYP ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2755OMTF-KSC2755-O-MTF-KSC2755YMTF-KSC2755-Y-MTF
NPN Epitaxial Silicon Transistor
KSC2755 KSC2755 RF AMP, FOR VHF &TV TUNER • Low NF, High G 3 PE • Forward AGC Capability to 30 dB • NF=2.0dB (TYP.), G =23dB (TYP.) at f=200MHz PE 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 20 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =20V, I =0 0.1 μA CBO CB E h DC Current Gain V =10V, I =3mA 60 120 240 FE CE C f Current Gain Bandwidth Product V =10V, I=3mA 400600 MHz T CE C C Reverse Transfer Capacitance f=1MHz, V =10V, I=0 0.30.5pF RE CB E G Power Gain V =10V, I =3mA 20 23 dB PE CE C f=200MHz I AGC Current f=200MHz -10 -12 mA AGC I at G = -30dB E R NF Noise Figure V =10V, I =3mA 2.0 0.3 dB CE C f=200MHz h Classification FE Classification R O Y h 60 ~ 120 90 ~ 180 120 ~ 240 FE Marking H1O h grade FE ©2002 Rev. A2, September 2002
