KSC2752-O-STU ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
KSC2752-O-STU ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
KSC2755OMTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
KSC2755-O-MTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
KSC2755YMTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
KSC2755-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2752-O-STU
NPN Epitaxial Silicon Transistor
KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 0.5 A C I *Collector Current (Pulse) 1 A CP I Base Current (DC) 0.25 A B P Collector Dissipation (T =25°C) 1 W C a P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤300μs, Duty Cycle≤10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 0.3A, I = 0.06A, L = 10mH 400 V CEO C B1 V (sus)1 Collector-Emitter Sustaining Voltage I = 0.3A, I = -I = 0.06A 450 V CEX C B1 B2 V (off) = -5V, L =10mH, Clamped BE V (sus)2 Collector-Emitter Sustaining Voltage I = 0.6A, I = 0.2A, I = -0.06A 400 V CEX C B1 B2 V (off) = -5V, L = 10mH, Clamped BE I Collector Cut-off Current V = 400V, I = 0 10 μA CBO CB E I Collector Cut-off Current V = 400V, R = 51Ω, T = 125°C 1 mA CER CE BE C I Collector Cut-off Current V = 400V, R (off) = -1.5V 10 μA CEX1 CE BE I Collector Cut-off Current V = 400V, R (off) = -1.5V 1mA CEX2 CE BE @ T = 125°C C I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h * DC Current Gain V = 5V, I = 0.05A 20 80 FE1 CE C h V = 5V, I = 0.3A 10 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = 0.3A, I = 0.06A 1 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 0.3A, I = 0.06A 2 V BE C B t Turn ON Time V = 150V, I = 0.3A 1 μs ON CC C I = -I = 0.06A, R = 500Ω t Storage Time B1 B2 L 2.5 μs STG PW = 50μs, Duty Cycle≤2% t Fall Time 1 μs F * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification R O Y h 20 ~ 40 30 ~ 60 40 ~ 80 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
