KSC2335-R ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
KSC2335-Y ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
KSC2335-Y ,NPN Epitaxial Silicon TransistorKSC2335KSC2335High Speed, High Voltage Switching• Industrial UseTO-2201NPN Epitaxial Silicon Transi ..
KSC2383 ,NPN Epitaxial Silicon TransistorKSC2383KSC2383Color TV Audio Output & Color TV Vertical Deflection OutputTO-92L11. Emitter 2. Coll ..
KSC2383-OBU ,NPN Epitaxial Silicon TransistorKSC2383KSC2383Color TV Audio Output & Color TV Vertical Deflection OutputTO-92L11. Emitter 2. Coll ..
KSC2383YTA ,NPN Epitaxial Silicon TransistorKSC2383KSC2383Color TV Audio Output & Color TV Vertical Deflection OutputTO-92L11. Emitter 2. Coll ..
L9012QLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9013QLT1 , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
L9014SLT1G , General Purpose Transistors NPN Silicon
KSC2335-R-KSC2335-Y
NPN Epitaxial Silicon Transistor
KSC2335 KSC2335 High Speed, High Voltage Switching • Industrial Use TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 7 A C I *Collector Current (Pulse) 15 A CP I Base Current (DC) 3.5 A B P Collector Dissipation (T =25°C) 1.5 W C a P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤300μs, Duty Cycle≤10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 3A, I = 0.6A, L = 1mH 400 V CEO C B1 V (sus)1 Collector-Emitter Sustaining Voltage I = 3A, I = -I = 0.6A 450 V CEX C B1 B2 V (off) = -5V, L = 180μH, Clamped BE V (sus)2 Collector-Emitter Sustaining Voltage I = 6A,I = 2A, I = -0.6A 400 V CEX C B1 B2 V (off) = -5V, L = 180μH, Clamped BE I Collector Cut-off Current V = 400V, I = 0 10 μA CBO CB E I Collector Cut-off Current V = 400V, R = 51Ω @ T =125°C 1 mA CER CE BE C I Collector Cut-off Current V = 400V, V (off)= -1.5V 10 μA CEX1 CE BE I Collector Cut-off Current V = 400V, V (off)= -1.5V @ 1mA CEX2 CE BE T =125°C C I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h * DC Current Gain V = 5V, I = 0.1A 20 80 FE1 CE C h V = 5V, I = 1A 20 80 FE2 CE C h V = 5V, I = 3A 10 FE3 CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 0.6A 1 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 3A, I = 0.6A 1.2 V BE C B t Turn ON Time V =150V, I = 3A 1 μs ON CC C I = -I = 0.6A t Storage Time B1 B2 2.5 μs STG R = 50Ω L t Fall Time 1 μs F * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification R O Y h 20 ~ 40 30 ~ 60 40 ~ 80 FE2 ©2001 Rev. A1, June 2001
