KSC2310YTA ,NPN Epitaxial Silicon TransistorKSC2310KSC2310High Voltage Power Amplifier• Collector-Base Voltage : V =200VCBO• Current Gain Bandw ..
KSC2316YTA ,NPN Epitaxial Silicon TransistorApplications• Driver Stage Amplifier• Complement to KSA916TO-92L11. Emitter 2. Collector 3. BaseNP ..
KSC2328A ,NPN (AUDIO POWER AMPLIFIER APPLICATIONS)
KSC2328AOBU ,NPN Epitaxial Silicon TransistorKSC2328AKSC2328AAudio Power Amplifier
KSC2328AOBU ,NPN Epitaxial Silicon TransistorApplications• Complement to KSA928A• Collector Power Dissipation : P =1WC• 3 Watt Output Applicatio ..
KSC2328AYTA ,NPN Epitaxial Silicon TransistorApplications• Complement to KSA928A• Collector Power Dissipation : P =1WC• 3 Watt Output Applicatio ..
L8C201PC25 , 512/1K/2K/4K x 9-bit Asynchronous FIFO
L9012PLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9013QLT1 , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
KSC2310YTA
NPN Epitaxial Silicon Transistor
KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : V =200V CBO • Current Gain Bandwidth Product : f =100MHz T TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 200 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 150 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I=0 5 V EBO E C I Collector Cut-off Current V =200V, I=0 0.1 μA CBO CB E h DC Current Gain V =5V, I=10mA 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.5 V CE C B f Current Gain Bandwidth Product V =30V, I =10mA 100 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 3.5 5 pF ob CB E h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2002 Rev. A2, September 2002
