KSC2258ASTU ,NPN Epitaxial Silicon TransistorKSC2258/2258AKSC2258/2258AHigh Voltage General Amplifier TV Video Output Amplifier High BVCEOTO-12 ..
KSC2310 ,NPN Epitaxial Silicon TransistorKSC2310KSC2310High Voltage Power Amplifier• Collector-Base Voltage : V =200VCBO• Current Gain Bandw ..
KSC2310YTA ,NPN Epitaxial Silicon TransistorKSC2310KSC2310High Voltage Power Amplifier• Collector-Base Voltage : V =200VCBO• Current Gain Bandw ..
KSC2316YTA ,NPN Epitaxial Silicon TransistorApplications• Driver Stage Amplifier• Complement to KSA916TO-92L11. Emitter 2. Collector 3. BaseNP ..
KSC2328A ,NPN (AUDIO POWER AMPLIFIER APPLICATIONS)
KSC2328AOBU ,NPN Epitaxial Silicon TransistorKSC2328AKSC2328AAudio Power Amplifier
L8C201PC25 , 512/1K/2K/4K x 9-bit Asynchronous FIFO
L9012PLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
L9013QLT1 , General Purpose Transistors NPN Silicon
L9013QLT1G , General Purpose Transistors NPN Silicon
KSC2258ASTU
NPN Epitaxial Silicon Transistor
KSC2258/2258A KSC2258/2258A High Voltage General Amplifier TV Video Output Amplifier High BV CEO TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSC2258 250 V : KSC2258A 300 V V Collector-Emitter Voltage CEO : KSC2258 250 V : KSC2258A 300 V V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 100 mA C I Collector Current (Pulse) 150 mA CP P Collector Dissipation (T =25°C) 4 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Emitter-Base Breakdown Voltage I = 0.1mA, I = 0 6 V EBO E C I Collector Cut-off Current V = 250V, R = 100KΩ 100 μA CER CE BE h DC Current Gain V = 20V, I = 40mA 40 FE1 CE C h V = 50V, I = 5mA 30 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 50mA, I = 5mA 1.2 V CE C B V (on) Base-Emitter On Voltage V = -20V, I = 40mA 1.2 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 10mA 100 MHz T CE C C Output Capacitance V = 50V, f = 1MHz 3 4.5 pF ob CB ©2000 Fairchild Semiconductor International Rev. A, February 2000
