KSC1845 ,NPN (AUDIO FREQUENCY LOW NOISE AMPLIFIER)KSC1845KSC1845Audio Frequency Low Noise Amplifier• Complement to KSA992TO-9211. Emitter 2. Collec ..
KSC2001GTA ,NPN Epitaxial Silicon TransistorApplications• High h and Low V (sat)FE CE TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Si ..
KSC2001GTA ,NPN Epitaxial Silicon TransistorKSC2001KSC2001General Purpose
KSC2073H2TU ,NPN Epitaxial Silicon TransistorKSC2073KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : V = 150 ..
KSC2073TU ,NPN Epitaxial Silicon TransistorKSC2073KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : V = 150 ..
KSC2073TU ,NPN Epitaxial Silicon TransistorKSC2073KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : V = 150 ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS33T ,3.3 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin Assignmentpackage..Surface mounting on board permits allowable powerdissipation to be raised..E ..
L88R05D ,5V, 1A Voltage-regulator ICs with Reset FunctionOperating Characteristics at Tj = 25 "C, VIN = 8 V, Iour = 1 A, COUT = 47 pA for specified circuits ..
L8C201PC25 , 512/1K/2K/4K x 9-bit Asynchronous FIFO
L9012PLT1 , General Purpose Transistors PNP Silicon
L9012QLT1 , General Purpose Transistors PNP Silicon
KSC1845
NPN Epitaxial Silicon Transistor
KSC1845 KSC1845 Audio Frequency Low Noise Amplifier • Complement to KSA992 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C I Base Current 10 mA B P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =120V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 50 nA EBO EB C h DC Current Gain V =6V, I =0.1mA 150 580 FE1 CE C h V =6V, I =1mA 200 600 1200 FE2 CE C V (on) Base-Emitter On Voltage V =6V, I=1mA 0.550.590.65 V BE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.07 0.3 V BE C B f Current Gain Bandwidth Product V =6V, I =1mA 50 110 MHz T CE C C Output Capacitance V =30V, I =0, f=1MHz 1.6 2.5 pF ob CB E NL Noise Level 25 40 mV h Classification FE Classification P F E U h 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200 FE2 ©2002 Rev. B2, November 2002
