KSC1674COTA ,NPN Epitaxial Silicon TransistorKSC1674KSC1674TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator• High Current Gain Bandwid ..
KSC1674CYTA ,NPN Epitaxial Silicon TransistorKSC1674KSC1674TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator• High Current Gain Bandwid ..
KSC1675O , FM/AM RF AMP, MIX, CONV,OSC,IF
KSC1675-O , FM/AM RF AMP, MIX, CONV,OSC,IF
KSC1730-YTA ,NPN Epitaxial Silicon TransistorKSC1730KSC1730TV VHF, UHF Tuner Oscillator• High Current Gain Bandwidth Product : f =1100MHzT• Outp ..
KSC1845 ,NPN (AUDIO FREQUENCY LOW NOISE AMPLIFIER)KSC1845KSC1845Audio Frequency Low Noise Amplifier• Complement to KSA992TO-9211. Emitter 2. Collec ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS33T ,3.3 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin Assignmentpackage..Surface mounting on board permits allowable powerdissipation to be raised..E ..
L88R05D ,5V, 1A Voltage-regulator ICs with Reset FunctionOperating Characteristics at Tj = 25 "C, VIN = 8 V, Iour = 1 A, COUT = 47 pA for specified circuits ..
KSC1674COTA-KSC1674CYTA
NPN Epitaxial Silicon Transistor
KSC1674 KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : f =600MHz (TYP.) T • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 20 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 20 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 4 V EBO E C I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 0.1 μA EBO EB C h DC Current Gain V =6V, I =1mA 40 240 FE CE C V (on) Base-Emitter On Voltage V =6V, I =1mA 0.72 V BE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.1 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =1mA 400 600 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 1.2 pF ob CB E C Collector-Base Time Constant V =6V, I =1mA 12 15 ps c·rbb’ CE C f=31.9MHz NF Noise Figure V =6V, I =1mA 3.0 5.0 dB CE C R =50Ω, f=100MHz S h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120~ 240 FE ©2002 Rev. B2, November 2002
