KSC1623YMTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
KSC1623-Y-MTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
KSC1674COTA ,NPN Epitaxial Silicon TransistorKSC1674KSC1674TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator• High Current Gain Bandwid ..
KSC1674CYTA ,NPN Epitaxial Silicon TransistorKSC1674KSC1674TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator• High Current Gain Bandwid ..
KSC1675O , FM/AM RF AMP, MIX, CONV,OSC,IF
KSC1675-O , FM/AM RF AMP, MIX, CONV,OSC,IF
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
KSC1623GMTF-KSC1623-G-MTF-KSC1623LMTF-KSC1623-L-MTF-KSC1623YMTF-KSC1623-Y-MTF
NPN Epitaxial Silicon Transistor
KSC1623 KSC1623 Low Frequency Amplifier & High Frequency 3 OSC. • Complement to KSA812 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =60V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =5V, I =0 0.1 μA EBO EB C h DC Current Gain V =6V, I =1mA 90 200 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.15 0.3 V CE C B V (sat) Base-Emitter Saturation Voltage I =100mA, I=10mA 0.861.0V BE C B V (on) Base-Emitter On Voltage V =6V, I=1mA 0.550.620.65 V BE CE C f Current Gain Bandwidth Product V =6V, I =10mA 250 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 3 pF ob CB E h Classification FE Classification O Y G L h 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 FE Marking C1O h grade FE ©2002 Rev. A2, September 2002
