KSC1623 ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency OSC. 3• Complement to KSA8122SOT-2311. Base ..
KSC1623-G , Low Frequency Amplifier & High Frequency OSC.
KSC1623GMTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
KSC1623-G-MTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
KSC1623LMTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
KSC1623-L-MTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
KSC1623
NPN Epitaxial Silicon Transistor
KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. 3 • Complement to KSA812 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =60V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =5V, I =0 0.1 μA EBO EB C h DC Current Gain V =6V, I =1mA 90 200 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.15 0.3 V CE C B V (sat) Base-Emitter Saturation Voltage I =100mA, I=10mA 0.861.0V BE C B V (on) Base-Emitter On Voltage V =6V, I=1mA 0.550.620.65 V BE CE C f Current Gain Bandwidth Product V =6V, I =10mA 250 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 3 pF ob CB E h Classification FE Classification O Y G L h 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 FE Marking C1O h grade FE ©2001 Rev. A1, June 2001
