KSC1507YTU ,NPN Epitaxial Silicon TransistorKSC1507KSC1507Color TV Chroma Output• High Collector-Emitter Voltage : V =300VCEO• Current Gain Ban ..
KSC1507-YTU ,NPN Epitaxial Silicon TransistorKSC1507KSC1507Color TV Chroma Output• High Collector-Emitter Voltage : V =300VCEO• Current Gain Ban ..
KSC1623 ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency OSC. 3• Complement to KSA8122SOT-2311. Base ..
KSC1623-G , Low Frequency Amplifier & High Frequency OSC.
KSC1623GMTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
KSC1623-G-MTF ,NPN Epitaxial Silicon TransistorKSC1623KSC1623Low Frequency Amplifier & High Frequency 3OSC.• Complement to KSA8122SOT-2311. Base ..
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
KSC1507-Y-KSC1507YTSTU-KSC1507YTU-KSC1507-YTU
NPN Epitaxial Silicon Transistor
KSC1507 KSC1507 Color TV Chroma Output • High Collector-Emitter Voltage : V =300V CEO • Current Gain Bandwidth Product : f =40MHz (Min.) T TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 0.2 mA C P Collector Dissipation (T =25°C) 15 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 100μA, I = 0 300 V CBO C E BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 300 V CEO C B BV Emitter-Base Breakdown Voltage I = - 10μA, I = 0 7 V EBO E C I Collector Cut-off Current V = 200V, I = 0 100 μA CBO CB E h DC Current Gain V = 10V, I = 10mA 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 50mA, I = 5mA 2.0 V CE C B f Current Gain Bandwidth Product V = 30V, I = 10mA 40 80 MHz T CE C C Output Capacitance V = 50V, I = 0, 4pF ob CB E f = 1MHz h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2002 Rev. A3, September 2002
