KSC1173 ,NPN Epitaxial Silicon TransistorKSC1173KSC1173Low Frequency Power AmplifierPower Regulator Collector Current : I =3AC Collector D ..
KSC1173YTU ,NPN Epitaxial Silicon TransistorKSC1173KSC1173Low Frequency Power AmplifierPower Regulator Collector Current : I =3AC Collector D ..
KSC1393 ,NPN Epitaxial Silicon TransistorKSC1393KSC1393TV VHF Tuner RF Amplifier (Forward AGC)• High Current Gain Bandwidth Product : f =700 ..
KSC1393 ,NPN Epitaxial Silicon TransistorKSC1393KSC1393TV VHF Tuner RF Amplifier (Forward AGC)• High Current Gain Bandwidth Product : f =700 ..
KSC1507-Y ,NPN Epitaxial Silicon TransistorKSC1507KSC1507Color TV Chroma Output• High Collector-Emitter Voltage : V =300VCEO• Current Gain Ban ..
KSC1507YTSTU ,NPN Epitaxial Silicon TransistorKSC1507KSC1507Color TV Chroma Output• High Collector-Emitter Voltage : V =300VCEO• Current Gain Ban ..
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
KSC1173
NPN Epitaxial Silicon Transistor
KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator Collector Current : I =3A C Collector Dissipation : P =10W (T =25°C) C C Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units BV Collector-Base Voltage 30 V CBO BV Collector-Emitter Voltage 30 V CEO BV Emitter-Base Voltage 5 V EBO I Collector Current 3 A C P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 500μA, I = 0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I = 10mA I = 0 30 V CEO C B BV Emitter-Base Breakdown Voltage I = -1mA, I = 0 5 EBO E C I Collector Cut-off Current V = 20V, I = 0 1.0 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 1.0 μA EBO EB C h DC Current Gain V = 2V, I = 0.5A 70 240 FE1 CE C h V = 2V, I = 2.5A 25 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.3 0.8 V CE C B V (on) Base-Emitter ON Voltage V = 2V, I = 0.5A 0.75 1.0 V BE CE C f Current Gain Base Width Product V = 2V, I = 0.5A 100 MHz T CE C C Output Capacitance V = 10V, I =0, 35 pF ob CB E f = 1MHz h Classification FE Classification O Y h 70 ~ 140 120 ~ 240 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
