KSC1009YTA ,NPN Epitaxial Silicon TransistorKSC1009KSC1009High Voltage Amplifier• High Collector-Base Voltage : V =160VCBO• Collector Current : ..
KSC1009YTA ,NPN Epitaxial Silicon TransistorKSC1009KSC1009High Voltage Amplifier• High Collector-Base Voltage : V =160VCBO• Collector Current : ..
KSC1173 ,NPN Epitaxial Silicon TransistorKSC1173KSC1173Low Frequency Power AmplifierPower Regulator Collector Current : I =3AC Collector D ..
KSC1173YTU ,NPN Epitaxial Silicon TransistorKSC1173KSC1173Low Frequency Power AmplifierPower Regulator Collector Current : I =3AC Collector D ..
KSC1393 ,NPN Epitaxial Silicon TransistorKSC1393KSC1393TV VHF Tuner RF Amplifier (Forward AGC)• High Current Gain Bandwidth Product : f =700 ..
KSC1393 ,NPN Epitaxial Silicon TransistorKSC1393KSC1393TV VHF Tuner RF Amplifier (Forward AGC)• High Current Gain Bandwidth Product : f =700 ..
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
KSC1009YTA
NPN Epitaxial Silicon Transistor
KSC1009 KSC1009 High Voltage Amplifier • High Collector-Base Voltage : V =160V CBO • Collector Current : I =700mA C • Collector Power Dissipation : P =800mW C • Complement to KSA709 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current 700 mA C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 160 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 140 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 8 V EBO E C I Collector Cut-off Current V =60V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =5V, I =0 0.1 μA EBO EB C h DC Current Gain V =2V, I =50mA 40 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I =200mA, I =20mA 0.2 0.7 V CE C B V (sat) Base-Emitter Saturation Voltage I =200mA, I =20mA 0.86 1.0 V BE C B f Current Gain Bandwidth Product V =10V, I =50mA 30 50 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 8 pF ob CB E h Classification FE Classification R O Y G h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 FE ©2001 Rev. A1, June 2001
