KSB834YTU ,PNP Epitaxial Silicon TransistorKSB834KSB834Low Frequency Power Amplifier• Complement to KSD880TO-22011.Base 2.Collector 3.Em ..
KSB907TU ,PNP Silicon Darlington TransistorApplications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode ..
KSC1008 ,NPN (LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING)
KSC1008Y , Low Frequency Amplifier Medium Speed Switching
KSC1008Y , Low Frequency Amplifier Medium Speed Switching
KSC1008-Y , Low Frequency Amplifier Medium Speed Switching
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
KSB834-Y-KSB834YTU
PNP Epitaxial Silicon Transistor
KSB834 KSB834 Low Frequency Power Amplifier • Complement to KSD880 TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 7 V EBO I Collector Current - 3 A C I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 30 W C C P Collector Dissipation (T =25°C) 1.5 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 60V, I = 0 - 100 μA CBO CB E I Emitter Cut-off Current V = - 7V, I = 0 - 100 μA EBO EB C BV Collector-Emitter Breakdown Voltage I = - 50mA, I = 0 - 60 V CEO C B h DC Current Gain V = - 5V, I = - 0.5A 60 200 FE1 CE C h V = - 5V, I = - 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 3A, I = - 0.3A - 0.5 - 1 V CE C B V (on) Base-Emitter ON Voltage V = - 5V, I = - 0.5A - 0.7 - 1 V BE CE C f Current Gain Bandwidth Product V = - 5V, I = - 0.5A 9 MHz T CE C C Output Capacitance V = - 10V, I = 0 150 pF ob CB E f = 1MHz t Turn ON Time V = -30V, I = - 1A 0.4 μs ON CC C I = - I = - 0.2A B1 B2 T Storage Time 1.7 μs STG R = 30Ω L t Fall Time 0.5 μs F h Classification FE Classification O Y h 60 ~ 120 100 ~ 200 FE1 ©2001 Rev. A1, June 2001
