KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772-Y , Audio Frequency Power Amplifier
KSB772-Y , Audio Frequency Power Amplifier
KSB772-Y , Audio Frequency Power Amplifier
KSB772YS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
KSB772OS-KSB772YS-KSB772-Y-S-KSB772YSTU
PNP Epitaxial Silicon Transistor
KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 40 V CBO V Collector-Emitter Voltage - 30 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 3 A C I *Collector Current (Pulse) - 7 A CP I Base Current (DC) - 0.6 A B P Collector Dissipation (T =25°C) 10 W C C Collector Dissipation (T =25°C) 1W a R Junction to Ambient 132 °C/W θja R Junction to Case 13.5 °C/W θjc T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 30V, I = 0 - 1 μA CBO CB E I Emitter Cut-off Current V = - 3V, I = 0 - 1 μA EBO EB C h * DC Current Gain V = - 2V, I = - 20mA 30 220 FE1 CE C h V = - 2V, I = - 1A 60 160 400 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.3 - 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 1.0 - 2.0 V BE C B f Current Gain Bandwidth Product V = - 5V, I = - 0.1A 80 MHz T CE E C Output Capacitance V = - 10V, I = 0 55 pF ob CB E f = 1MHz * Pulse Test: PW≤350μs, Duty Cycle≤2% h Classificntion FE Classification R O Y G h 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400 FE2 ©2002 Rev. B, October 2002
