KSB707 ,PNP Epitaxial Silicon TransistorKSB707/708KSB707/708Low Frequency Power Amplifier Low Speed Switching Industrial Use Complemen ..
KSB744 ,PNP Epitaxial Silicon TransistorKSB744/744AKSB744/744AAudio Frequency Power Amplifier Complement to KSD794/KSD794ATO-12611. Emitte ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772-Y , Audio Frequency Power Amplifier
KSB772-Y , Audio Frequency Power Amplifier
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
KSB707
PNP Epitaxial Silicon Transistor
KSB707/708 KSB707/708 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSD568/569 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 80 V CBO V Collector-Emitter Voltage : B707 - 60 V CEO : B708 - 80 V V Emitter-Base Voltage - 7.0 V EBO I Collector Current (DC) - 7.0 A C I *Collector Current (Pulse) - 15 A CP I Base Current (DC) - 3.5 A B P Collector Dissipation (T =25°C) 40 W C C P Collector Dissipation (T =25°C) 1.5 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤300μs, Duty Cycle≤10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Typ. Max. Units I Collector Cut-off Current V = - 60V, I = 0 - 10 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 μA EBO EB C 40 200 h * DC Current Gain V = - 1V, I = - 3A FE1 CE C h V = - 1V, I = - 5A 20 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 5A, I = - 0.5A - 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 5A, I = - 0.5A - 1.5 V BE C B * Pulse Test: PW≤350μs, Duty Cycle≤2% h Cassification FE Classification R O Y h 40 ~ 80 60 ~ 120 100 ~ 200 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
