KSB601YTU ,PNP Epitaxial Silicon Darlington TransistorKSB601KSB601Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD ..
KSB707 ,PNP Epitaxial Silicon TransistorKSB707/708KSB707/708Low Frequency Power Amplifier Low Speed Switching Industrial Use Complemen ..
KSB744 ,PNP Epitaxial Silicon TransistorKSB744/744AKSB744/744AAudio Frequency Power Amplifier Complement to KSD794/KSD794ATO-12611. Emitte ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
KSB772-Y , Audio Frequency Power Amplifier
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
KSB601YTU
PNP Epitaxial Silicon Darlington Transistor
KSB601 KSB601 Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD560 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 100 V CBO V Collector-Emitter Voltage - 100 V CEO V Emitter-Base Voltage - 7 V EBO I Collector Current (DC) - 5 A C I *Collector Current (Pulse) - 8 A CP I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 1.5 W C a P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% ©2000 Fairchild Semiconductor International Rev. A, February 2000
