KSB596-O ,PNP Epitaxial Silicon TransistorKSB596KSB596Power Amplifier
KSB596YTU ,PNP Epitaxial Silicon TransistorApplications Complement to KSD526TO-22 ..
KSB601YTU ,PNP Epitaxial Silicon Darlington TransistorKSB601KSB601Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD ..
KSB707 ,PNP Epitaxial Silicon TransistorKSB707/708KSB707/708Low Frequency Power Amplifier Low Speed Switching Industrial Use Complemen ..
KSB744 ,PNP Epitaxial Silicon TransistorKSB744/744AKSB744/744AAudio Frequency Power Amplifier Complement to KSD794/KSD794ATO-12611. Emitte ..
KSB772OS ,PNP Epitaxial Silicon TransistorKSB772KSB772Audio Frequency Power Amplifier • Low Speed Switching• Complement to KSD882TO-12611. Em ..
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
KSB596-O-KSB596YTU
PNP Epitaxial Silicon Transistor
KSB596 KSB596 Power Amplifier Applications Complement to KSD526 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 80 V CBO V Collector-Emitter Voltage - 80 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current(DC) - 4 A C I Base Current - 0.4 A B P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = - 50mA, I = 0 - 80 V CEO C B BV Emitter-Base Breakdown Voltage I = - 10mA, I = 0 - 5 V EBO E C I Collector Cut-off Current V = - 80V, I = 0 - 70 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 100 μA EBO EB C h DC Current Gain V = - 5V, I = - 0.5A 40 240 FE1 CE C h V = - 5V, I = - 3A 15 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 3A, I = - 0.3A - 1 - 1.7 V CE C B V (on) Base-Emitter ON Voltage V = - 5V, I = - 3A - 1 - 1.5 V BE CE C f Current Gain Bandwidth Product V = - 5V, I = - 0.5A 3 MHz T CE C C Output Capacitance V = - 10V, I = 0 130 pF ob CB E f = 1MHz h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
