KSB564A ,PNP Epitaxial Silicon TransistorKSB564AKSB564AAudio Frequency Power Amplifier • Complement to KSD471A• Collector Current : I = -1AC ..
KSB564ACYTA ,PNP Epitaxial Silicon TransistorKSB564AKSB564AAudio Frequency Power Amplifier • Complement to KSD471A• Collector Current : I = -1AC ..
KSB564AC-YTA ,PNP Epitaxial Silicon TransistorKSB564AKSB564AAudio Frequency Power Amplifier • Complement to KSD471A• Collector Current : I = -1AC ..
KSB564AO , Audio Frequency Power Amplifier
KSB564A-O , Audio Frequency Power Amplifier
KSB564AY , Audio Frequency Power Amplifier
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
KSB564A
PNP Epitaxial Silicon Transistor
KSB564A KSB564A Audio Frequency Power Amplifier • Complement to KSD471A • Collector Current : I = -1A C • Collector Power Dissipation : P = 800mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -1.0 A C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -25 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -30V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -1V, I = -100mA 70 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -1A, I = -0.1A -0.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = -1A, I = -0.1A -1.2 V BE C B f Current Gain Bandwidth Product V = -6V, I = -10mA 110 MHz T CE C C Output Capacitance V = -6V, I =0, f=1MHz 18 pF ob CB E h Classification FE Classification O Y G h 70 ~ 140 120 ~ 240 200 ~ 400 FE ©2001 Rev. A1, June 2001
