KSA931-YTA ,PNP Epitaxial Silicon TransistorKSA931KSA931Low Frequency Amplifier & Medium Speed Switching• Complement to KSC2331• Collector-Base ..
KSA940-H2 ,PNP Epitaxial Silicon TransistorKSA940KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Col ..
KSA940TU ,PNP Epitaxial Silicon TransistorKSA940KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Col ..
KSA940TU ,PNP Epitaxial Silicon TransistorKSA940KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Col ..
KSA992 ,PNP Epitaxial Silicon TransistorKSA992KSA992Audio Frequency Low Noise Amplifier• Complement to KSC1845TO-9211. Emitter 2. Collect ..
KSA992PTA ,PNP Epitaxial Silicon TransistorKSA992KSA992Audio Frequency Low Noise Amplifier• Complement to KSC1845TO-9211. Emitter 2. Collect ..
L8202 ,MULTIFUNCTION ANALOG ASICBlock DiagramPW PW PWM M M g g gen. en. en.L820 L8202 2D D DC C C m m mo o otor tor torDC DC DC M M ..
L8202 ,MULTIFUNCTION ANALOG ASICFEATURESFigure 1. Package■ Flexible Motor Driver configuration– 4 DC Motor drivers (1.5A Peak Curre ..
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
KSA931-YTA
PNP Epitaxial Silicon Transistor
KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : V = -80V CBO • Collector Power Dissipation : P =1W C TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -8 V EBO I Collector Current -700 mA C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -80 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -60 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -8 V EBO E C I Collector Cut-off Current V = -60V, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h * DC Current Gain V = -2V, I = -50mA 40 240 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.3 -0.7 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -500mA, I = -50mA -0.9 -1.2 V BE C B f Current Gain Bandwidth Productor V = -10V, I = -50mA 100 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 13 pF ob CB E * Pulse Test: PW≤350μs, Duty cycle≤2% h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2002 Rev. A2, September 2002
