KSA928AYBU ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928AYBU ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928AYTA ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA931-YTA ,PNP Epitaxial Silicon TransistorKSA931KSA931Low Frequency Amplifier & Medium Speed Switching• Complement to KSC2331• Collector-Base ..
KSA940-H2 ,PNP Epitaxial Silicon TransistorKSA940KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Col ..
KSA940TU ,PNP Epitaxial Silicon TransistorKSA940KSA940Vertical Deflection Output Power Amplifier Complement to KSC2073TO-22011.Base 2.Col ..
L80N4LLF3 , N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion
L8202 ,MULTIFUNCTION ANALOG ASICBlock DiagramPW PW PWM M M g g gen. en. en.L820 L8202 2D D DC C C m m mo o otor tor torDC DC DC M M ..
L8202 ,MULTIFUNCTION ANALOG ASICFEATURESFigure 1. Package■ Flexible Motor Driver configuration– 4 DC Motor drivers (1.5A Peak Curre ..
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
KSA928A-KSA928AYBU-KSA928AYTA
PNP Epitaxial Silicon Transistor
KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : P =1W C • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -2 A C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -30 V CEO C B BV Emitter-Base Breakdown Voltage I = -1mA, I =0 -5 V EBO E C I Collector Cut-off Current V = -30V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -100 nA EBO EB C h DC Current Gain V = -2V, I = -500mA 100 320 FE CE C V (on) Base-Emitter On Voltage V = -2V, I = -500mA -1.0 V BE CE C V (sat) Collector-Emitter Saturation Voltage I = -1.5A, I = -30mA -2.0 V CE C B C Output Capacitance V = -10V, I =0, f=1MHz 48 pF ob CB E f Current Gain Bandwidth Product V = -2V, I = -500mA 120 MHz T CE C h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE ©2002 Rev. A2, September 2002
