KSA910-YTA ,PNP Epitaxial Silicon TransistorApplications• Collector-Emitter Voltage : V = -150VCEO• Output Capacitance : C =5pF (MAX.)ob• Compl ..
KSA928A ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928A ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928AYBU ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928AYBU ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
KSA928AYTA ,PNP Epitaxial Silicon TransistorKSA928AKSA928AAudio Power Amplifier• Complement to KSC2328A• Collector Power Dissipation : P =1WC• ..
L8050QLT1 , General Purpose Transistors NPN Silicon
L80N4LLF3 , N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion
L8202 ,MULTIFUNCTION ANALOG ASICBlock DiagramPW PW PWM M M g g gen. en. en.L820 L8202 2D D DC C C m m mo o otor tor torDC DC DC M M ..
L8202 ,MULTIFUNCTION ANALOG ASICFEATURESFigure 1. Package■ Flexible Motor Driver configuration– 4 DC Motor drivers (1.5A Peak Curre ..
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8229 , Dual DMOS full bridge stepper/DC motor driver
KSA910-YTA
PNP Epitaxial Silicon Transistor
KSA910 KSA910 Driver Stage Of Audio Amplifier & High Voltage Switching Applications • Collector-Emitter Voltage : V = -150V CEO • Output Capacitance : C =5pF (MAX.) ob • Complement to KSC2310 TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -150 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -50 mA C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -150 V CBO C E BV Collector-Emitter Breakdown Voltage I = -5mA, I =0 -150 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -150V, I =0 -100 nA CBO CB E h DC Current Gain V = -5V, I = -10mA 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.8 V CE C B f Current Gain Bandwidth Product V = -30V, I = -10mA 100 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 5 pF ob CB E h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2001 Rev. A1, June 2001
