KSA708YBU ,PNP Epitaxial Silicon TransistorKSA708KSA708Low Frequency Amplifier & Medium Speed Switching• Complement to KSC1008• Collector-Base ..
KSA709GTA ,PNP Epitaxial Silicon TransistorKSA709KSA709High Voltage Amplifier• Collector-Base Voltage : V = -160VCBO• Collector Power Dissipat ..
KSA709GTA ,PNP Epitaxial Silicon TransistorKSA709KSA709High Voltage Amplifier• Collector-Base Voltage : V = -160VCBO• Collector Power Dissipat ..
KSA733 ,PNP Epitaxial Silicon TransistorKSA733KSA733Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC945• Su ..
KSA733C-GTA ,PNP Epitaxial Silicon TransistorKSA733KSA733Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC945• Su ..
KSA733G , Low Frequency Amplifier
L80227 , 10BASE-T/ 100BASE-TX Ethernet PHY
L8045 , Red LED for optical link
L8050HRLT1G , General Purpose Transistors NPN Silicon Epitaxial planar type.
L8050PLT1G , General Purpose Transistors NPN Silicon Epitaxial planar type.
L8050QLT1 , General Purpose Transistors NPN Silicon
L8050QLT1 , General Purpose Transistors NPN Silicon
KSA708YBU
PNP Epitaxial Silicon Transistor
KSA708 KSA708 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC1008 • Collector-Base Voltage : V = -80V CBO • Collector Power Dissipation : P =800mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -8 V EBO I Collector Current -700 mA C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -80 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -60 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -8 V EBO E C I Collector Cut-off Current V = -60V, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h * DC Current Gain V = -2V, I = -50mA 40 240 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.3 -0.7 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -500mA, I = -50mA -0.9 1.1 V BE C B f Current Gain Bandwidth Product V = -10V, I = -50mA 50 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 13 pF ob CB E * Pulse Test: PW≤350μs, Duty cycle≤2% h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2001 Rev. A1, August 2001
