KSA1304-YTU ,PNP Epitaxial Silicon TransistorApplications Complement to KSC3296TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon ..
KSA1381 ,PNP Epitaxial Silicon TransistorKSA1381KSA1381CRT Display, Video Output High Collector-Emitter Breakdown Voltage : V = -300VCEO L ..
KSA1381ES ,PNP Epitaxial Silicon TransistorKSA1381KSA1381CRT Display, Video Output High Collector-Emitter Breakdown Voltage : V = -300VCEO L ..
KSA1381ESTU ,PNP Epitaxial Silicon TransistorKSA1381KSA1381CRT Display, Video Output High Collector-Emitter Breakdown Voltage : V = -300VCEO L ..
KSA1406CSTU ,PNP Epitaxial Silicon TransistorKSA1406KSA1406CRT Display, Video Output High Current Gain Bandwidth Product : f = 400MHz (Typ.)T ..
KSA473YTU ,PNP Epitaxial Silicon TransistorKSA473KSA473Low Frequency Power AmplifierPower Regulator Collector Current : I = -3AC Collector D ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1304-YTU
PNP Epitaxial Silicon Transistor
KSA1304 KSA1304 Vertical Output Applications Power Amplifier Applications Complement to KSC3296 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 150 V CBO V Collector-Emitter Voltage - 150 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 1.5 A C I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 120V, I = 0 - 10 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 μA EBO EB C h DC Current Gain V = - 10V, I = - 500mA 40 75 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA - 1.5 V CE C B V (on) Base-Emitter ON Voltage V = - 10V, I = - 500mA - 0.65 - 0.75 - 0.85 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 500mA 4 MHz T CE C C Output Capacitance V = - 10V, f = 1MHz 55 pF ob CB ©2000 Fairchild Semiconductor International Rev. A, February 2000
