KSA1298 ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
KSA1298OMTF ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
KSA1298YMTF ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
KSA1298YMTF ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
KSA1304-YTU ,PNP Epitaxial Silicon TransistorApplications Complement to KSC3296TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon ..
KSA1381 ,PNP Epitaxial Silicon TransistorKSA1381KSA1381CRT Display, Video Output High Collector-Emitter Breakdown Voltage : V = -300VCEO L ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1298
PNP Epitaxial Silicon Transistor
KSA1298 KSA1298 Low Frequency Power Amplifier 3 • Complement to KSC3265 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -800 mA C I Base Current -160 mA B P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG • Refer to KSA643 for graphs. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -25 V CEO C B BV Emitter-Base Breakdown Voltage I = -1mA, I =0 -5 V EBO E C I Collector Cut-off Current V = -30V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -100 nA EBO BE C h DC Current Gain V = -1V, I = -100mA 100 320 FE1 CE C h V = -1V, I = -800mA 40 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -500mA, I = -20mA -0.4 V CE C B V (on) Base-Emitter On Voltage V = -1V, I = -10mA -0.5 -0.8 V BE CE C f Current Gain Bandwidth Product V = -5V, I = -10mA 120 MHz T CE C C Output Capacitance V = -10V, I = 0, f=1MHz 13 pF ob CB E h Classification FE1 Classification O Y h 100 ~ 200 160 ~ 320 FE1 Marking J1O h grade FE ©2001 Rev. A1, June 2001
