KSA1281YTA ,PNP Epitaxial Silicon TransistorKSA1281KSA1281Audio Power Amplifier• Collector Power Dissipation : P =1WC• 3 Watt Output Applicatio ..
KSA1298 ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
KSA1298OMTF ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
KSA1298YMTF ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
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L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1281YTA
PNP Epitaxial Silicon Transistor
KSA1281 KSA1281 Audio Power Amplifier • Collector Power Dissipation : P =1W C • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -2 A C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ +150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -50 V CEO C B BV Emitter-Base Breakdown Voltage I = -1mA, I =0 -5 V EBO E C I Collector Cut-off Current V = -50V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -100 nA EBO EB C h DC Current Gain V = -2V, I = -500mA 70 240 FE1 CE C h V = -2V, I = -1.5A 40 FE2 CE C V (sat) Base-Emitter Saturation Voltage I = -1A, I = -0.05mA -1.2 V BE C B V (sat) Collector-Emitter Saturation Voltage I = -1A, I = -0.05mA -0.5 V CE C B C Output Capacitance V = -10V, I =0, f=1MHz 40 pF ob CB E f Current Gain Bandwidth Product V = -2V, I = -500mA 100 MHz T CE C h Classification FE1 Classification O Y h 70 ~ 140 120 ~ 240 FE1 ©2001 Rev. A1, June 2001
