KSA1203OTF ,PNP Epitaxial Silicon TransistorKSA1203KSA1203Low Frequency Power Amplifier• 3W Output application• Collector Power Dissipation P = ..
KSA1203-YTF ,PNP Epitaxial Silicon TransistorKSA1203KSA1203Low Frequency Power Amplifier• 3W Output application• Collector Power Dissipation P = ..
KSA1220AOS ,PNP Epitaxial Silicon TransistorKSA1220/1220AKSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier• Complement ..
KSA1220A-Y-S ,PNP Epitaxial Silicon TransistorKSA1220/1220AKSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier• Complement ..
KSA1220A-Y-S ,PNP Epitaxial Silicon TransistorKSA1220/1220AKSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier• Complement ..
KSA1220AYSTSTU ,PNP Epitaxial Silicon TransistorKSA1220/1220AKSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier• Complement ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1203OTF-KSA1203-YTF
PNP Epitaxial Silicon Transistor
KSA1203 KSA1203 Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation P =1~2W : Mounted on Ceramic Board C • Complement to KSC2883 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -1.5 A C I Base Current -0.3 A B P Collector Power Dissipation 500 mW C P * 1,000 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Mounted on Ceramic Board (250mm2 × 0.8mm) Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -30 V CEO C B BV Emitter-Base Breakdown Voltage I = -1mA, I =0 -5 V EBO E C I Collector Cut-off Current V = -30V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -100 nA EBO BE C h DC Current Gain V = -2V, I = -500mA 100 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -1.5A, I = -30mA -2.0 V CE C B V (on) Base-Emitter On Voltage V = -2V, I = -500mA -1.0 V BE CE C f Current Gain Bandwidth Product V = -2V, I = -500mA 120 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 50 pF ob CB E h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE Marking SGX h grade FE ©2004 Rev. A3, June 2004
