KSA1175GTA ,PNP Epitaxial Silicon TransistorKSA1175KSA1175Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC2785T ..
KSA1175YTA ,PNP Epitaxial Silicon TransistorKSA1175KSA1175Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC2785T ..
KSA1182 ,PNP (LOW FREQUENCY POWER AMPLIFIER)KSA1182KSA1182Low Frequency Power Amplifier• Complement to KSC285932SOT-2311. Base 2. Emitter 3 ..
KSA1182Y , Low Frequency Power Amplifier
KSA1182-Y , Low Frequency Power Amplifier
KSA1182YMTF ,PNP Epitaxial Silicon TransistorKSA1182KSA1182Low Frequency Power Amplifier• Complement to KSC285932SOT-2311. Base 2. Emitter 3 ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1175GTA-KSA1175YTA
PNP Epitaxial Silicon Transistor
KSA1175 KSA1175 Low Frequency Amplifier • Collector-Base Voltage : V = -60V CBO • Complement to KSC2785 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -150 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -60 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -50 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -60V, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h DC Current Gain V = -6V, I = -1mA 40 700 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.18 -0.3 V CE C B V (on) Base-Emitter On Voltage V = -6V, I = -1mA -0.50 -0.62 -0.80 V BE CE E f Current Gain Bandwidth Product V = -6V, I = -10mA 50 180 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 2.8 pF ob CB E NF Noise Figure V = -6V, I = -0.3mA 6.0 20 dB CE C f=100Hz, R =10KΩ S h Classification FE Classification R O Y G L h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE ©2002 Rev. A2, September 2002
