KSA1142YSTU ,PNP Epitaxial Silicon TransistorKSA1142KSA1142Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682T ..
KSA1142YSTU ,PNP Epitaxial Silicon TransistorKSA1142KSA1142Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682T ..
KSA1156OS ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter High Breakdown ..
KSA1156OSTU ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter High Breakdown ..
KSA1156YS ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter High Breakdown ..
KSA1156YS ,PNP Silicon TransistorKSA1156KSA1156High Voltage SwitchingLow Power Switching Regulator DC-DC Converter High Breakdown ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1142YSTU
PNP Epitaxial Silicon Transistor
KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 180 V CBO V Collector-Emitter Voltage - 180 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 100 mA C P Collector Dissipation (T =25°C) 1.2 W C a P Collector Dissipation (T =25°C) 8 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 180V, I = 0 - 1 μA CBO CB E I Emitter Cut-off Current V = - 3V, I = 0 - 1 μA EBO EB C h * DC Current Gain V = - 5V, I = - 1mA 90 200 FE1 CE C h V = - 5V, I = - 10mA 100 200 320 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 50mA, I = - 5mA - 0.16 - 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 50mA, I = - 5mA - 0.8 - 1.5 V BE C B f Current Gain Bandwidth Product V = - 10V, I = - 20mA 180 MHz T CE C C Output Capacitance V = - 10V, I = 0, f=1MHz 4.5 7 pF ob CB E NF Noise Figure V = - 10V, I = - 1mA 4dB CE C R = 10kΩ, f = 1MHz S * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE2 ©2000 Fairchild Semiconductor International Rev. A, February 2000
