KMZ43T ,Magnetic field sensorDISCRETE SEMICONDUCTORSDATA SHEETM3D315KMZ43Magnetic field sensorObjective specification 2000 Aug 24 ..
KMZ52 ,Magnetic Field Sensor
KN2222 , EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KN2222AS , EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
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KN2907S , EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
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L3GD20TR ,MEMS motion sensor: 3-axis digital gyroscopeFeaturesrate sensor.• Three selectable full scales (250/500/2000 It includes a sensing element and ..
L4004D3 , Sensitive Triacs (0.8 A to 8 A)
L4004D5 , Sensitive Triacs (0.8 A to 8 A)
L4004D6 , Sensitive Triacs (0.8 A to 8 A)
KMZ43T
Magnetic field sensor
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
DESCRIPTIONThe KMZ43 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges, witha relative angular displacement
of 45°.
A rotating magnetic field in the x-y plane will produce two
independent sinusoidal output signals, one a function of
+cos(2α) and the second a function of +sin(2α),α being
the angle between sensor and field direction (see Fig.3).
Unlike the KMZ41(1), which needs a saturation field
strength of 100 kA/m, the KMZ43 is suited to high
precision angle measurement applications under low field
PINNING(1) The KMZ41 delivers a +sin(2α) and a −cos(2α) signal.
QUICK REFERENCE DATA
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
CIRCUIT DIAGRAM
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
CHARACTERISTICSTamb =25 °C and Hrotation=25 kA/m, VCC1 =5V; VCC2=5 V unless otherwise specified.
Notes Sensitivity changes with angle due to sinusoidal output. Vpeak= (Vout max− Voffset). . Bridge resistance between pins8 and 4, pins7 and 3, pins5 and 1, pins6 and2. . .
TCV peak 100= peakT2() V peakT1()–
VpeakT1() T2 T1– ()------------------------------------------------------- WhereT1 40°CT2 150°C=;–=
TCR bridge 100= bridgeT2() R bridgeT1()–
RbridgeT1() T2 T1– ()--------------------------------------------------------------- WhereT1 40°CT2 150°C=;–=
TCV offset offsetT2() V offsetT1()–2 T1– () ---------------------------------------------------------= WhereT1 40°CT2 150°C=;–=
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43 . .
10. Δα= αreal −αmeasured without offset voltage influences.1 100 VO1 67.5° ()135° 45°⇒ VO1 67.5° ()45° 135°⇒– peak1× --------------------------------------------------------------------------------------------------------=2 100VO2 22.5° ()90° 0°⇒ VO2 22.5°()0° 90°⇒– peak2× ----------------------------------------------------------------------------------------------= V peak1 peak2
----------------- 100⋅=
TCk 100 kT2kT1– ()T1T2 T1– ()--------------------------------= WhereT1 40°CT2 150°C=;–=
Philips Semiconductors Objective specification
Magnetic field sensor KMZ43
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
