KMZ41 ,Magnetic field sensorDISCRETE SEMICONDUCTORSDATA SHEETM3D315 M3D315KMZ41Magnetic field sensorPreliminary specification 20 ..
KMZ43T ,Magnetic field sensorDISCRETE SEMICONDUCTORSDATA SHEETM3D315KMZ43Magnetic field sensorObjective specification 2000 Aug 24 ..
KMZ52 ,Magnetic Field Sensor
KN2222 , EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KN2222AS , EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KN2907AS , EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
L3G4200D ,MEMS motion sensor: three-axis digital output gyroscopeFeatures■ Three selectable full scales (250/500/2000 dps)2■ I C/SPI digital output interface■ 16 bi ..
L3G4200DTR ,MEMS motion sensor: three-axis digital output gyroscopeBlock diagram . . . . . . 163.2 FIFO . . . . . 163.2.1 Bypass mode . . . . . 163.2. ..
L3GD20TR ,MEMS motion sensor: 3-axis digital gyroscopeFeaturesrate sensor.• Three selectable full scales (250/500/2000 It includes a sensing element and ..
L4004D3 , Sensitive Triacs (0.8 A to 8 A)
L4004D5 , Sensitive Triacs (0.8 A to 8 A)
L4004D6 , Sensitive Triacs (0.8 A to 8 A)
KMZ41
Magnetic field sensor
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41
DESCRIPTIONThe KMZ41 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges. Its properties enable this sensor to
be used in angle measurement applications under strong
field conditions. A rotating magnetic field
strength>40 kA/m (recommended field
strength> 100 kA/m) in the x-y plane will deliver a
sinusoidal output signal. The sensor can be operated at
any frequency between DC and 1 MHz.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41
CIRCUIT DIAGRAM
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41
CHARACTERISTICSTamb =25 °C; Hrotation= 100 kA/m; VCC1 =5V; VCC2=5 V unless otherwise specified.
Notes Sensitivity changes with angle due to sinusoidal output. Vpeak= (Vout max− Voffset). . Bridge resistance between pins8 and 4, pins7 and 3, pins5 and 1, pins6 and2. . . ΔVoffset =(Voffset(T)− Voffset(T=25 °C).
TCV peak 100= peakT2() V peakT1()– peakT1()T2 T1– ()------------------------------------------------------- WhereT1 40°CT2 150°C=;–=
TCR bridge 100= bridgeT2() R bridgeT1()–
RbridgeT1() T2 T1– ()--------------------------------------------------------------- WhereT1 40°CT2 150°C=;–=
TCV offset
VoffsetT2() VoffsetT1()–2 T1– () ---------------------------------------------------------= WhereT1 40°CT2 150°C=;–=
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41 No change in VO; no distortion of sinusoidal output; tested up to 25000 °/s maximum.
10. .
11. .
12. Δα= αreal −αmeasured without offset voltage influences.1 100VO1 67.5° ()135° 45°⇒ VO1 67.5° ()45° 135°⇒– peak1× --------------------------------------------------------------------------------------------------------=2 100VO2 22.5° ()90° 0°⇒ VO2 22.5°()0° 90°⇒–
2Vpeak2× ----------------------------------------------------------------------------------------------= V peak1 peak2
----------------- 100⋅=
TCk 100 kT2kT1– ()T1T2 T1– ()--------------------------------= Where T1 40°CT2 150°C=;–=
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41