KBP08M ,Bridge RectifiersFeatures• Surge overload rating: 50 amperespeak.• Reliable low cost construction utilizingmolded pl ..
KBP10M ,Bridge RectifiersKBP005M/3N246 - KBP10M/3N252KBP005M/3N246 - KBP10M/3N252
KBP10M ,Bridge RectifiersFeatures• Surge overload rating: 50 amperespeak.• Reliable low cost construction utilizingmolded pl ..
KBP201G , Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A
KBP201G , Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A
KBP202G , Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A
KSA709GTA ,PNP Epitaxial Silicon TransistorKSA709KSA709High Voltage Amplifier• Collector-Base Voltage : V = -160VCBO• Collector Power Dissipat ..
KSA733 ,PNP Epitaxial Silicon TransistorKSA733KSA733Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC945• Su ..
KSA733C-GTA ,PNP Epitaxial Silicon TransistorKSA733KSA733Low Frequency Amplifier• Collector-Base Voltage : V = -60VCBO• Complement to KSC945• Su ..
KSA733G , Low Frequency Amplifier
KSA733G , Low Frequency Amplifier
KSA733-G , Low Frequency Amplifier
KBP08M
Bridge Rectifiers
KBP005M/3N246 - KBP10M/3N252 KBP005M/3N246 - KBP10M/3N252 Features • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. ~ ~ - • UL certified, UL #E111753. + KBPM Bridge Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value 005M 01M 02M 04M 06M 08M 10M Symbol Parameter Units 246 247 248 249 250 251 252 V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM V Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V RMS V DC Reverse Voltage (Rated V) 50 100 200 400 600 800 1000 V R R I Average Rectified Forward Current, F(AV) 1.5 A @ T = 50°C A I Non-repetitive Peak Forward Surge Current 50 A FSM Storage Temperature Range -55 to +165 T °C stg T Operating Junction Temperature -55 to +165 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 3.5 W D R Thermal Resistance, Junction to Ambient,* per leg 40 C/W ° θJA *Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm). Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units V Forward Voltage, per bridge @ 1.0 A 1.0 V F @ 3.14 A 1.3 V I R Reverse Current, total bridge @ rated V R 5.0 A μ T = 25°C A 500 μA T = 100 C ° A 2 2 I t rating for fusing t < 8.35 ms 10 A s C Total Capacitance, per leg T 15 pF V = 4.0 V, f = 1.0 MHz R 2001 KBP005M/3N246-KBP10M/3N252, Rev. C
