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6
KBU6005 Thru KBU610
I
KBU802 ,8 AMP SILICON BRIDGE RECTIFIERWmvnweDem
lit KBU8005 Thru KBU810
8 AMP SILICON BRIDGE RECTIFIER
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KBU802 ,8 AMP SILICON BRIDGE RECTIFIERWmvnweDem
lit KBU8005 Thru KBU810
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KBU804 ,8 AMP SILICON BRIDGE RECTIFIERWmvnweDem
lit KBU8005 Thru KBU810
8 AMP SILICON BRIDGE RECTIFIER
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KBU805 , 8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
KBU806 ,8 AMP SILICON BRIDGE RECTIFIERWmvnweDem
lit KBU8005 Thru KBU810
8 AMP SILICON BRIDGE RECTIFIER
I
K2717
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
TOSHIBA ZSK2717
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (n-MOSIII)
ZSK27117
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS
Unit in mm
DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
0 Low Drain-Source ON Resistance : RDS(ON)=2.3n (Typ.)
ct High Forward Transfer Admittance : lYf'sl=4.4S(Typ.)
0 Low Leakage Current .' IDss=100pA(Max.) (VDS=720V)
o Enhancement-Mode : Vth=2.0--4.0V(VDs=10V, ID=1mA)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
2.54:0.25 2.54:0.25
Drain-Source Voltage VDSS 900 V m
Drain-Gate Voltage (RGS--20kn) VDGR 900 V tl':-',-, _"‘ g
Gate-Source Voltage VGSS i30 V 1,i,'."--iEjrl(i". 2
. ID 5 o 1
Drain Current A
IDP 15 l. GATE
Drain Power Dissipation (Tc=25°C) PD 45 W i 513333; 3
Single Pulse Avalanche Energy** E AS 595 mJ .
Avalanche Current IAR 5 A JEDEC -
Repetitive Avalanche Energy* E AR 4.5 mJ EIAJ SC-67
Channel Temperature Tch 150 "C TOSHIBA 2-10R1B
Storage Temperature Range Tstg -55--150 T Weight : 1.9g(Typ.)
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rth(ch-c) 2.78 °C/ W
Thermal Resistance, Channel to Ambient Rth (ch-a) 62.5 °C/W
Note ;
* Repetitive rating ; Pulse Width Limited by Max. junction temperature.
** VDD=90V, Starting Tch=25°C, L=43.6mH, RG=25Q, IAR=5A
This transistor is an electrostatic sensitive device.
Please handle with caution.
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress, It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-11-12 1/5
TOSHIBA ZSK2717
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = k- 30V, VDS = 0V - - ul- 10 PA
Gate-Source Breakdown
= + = + - -
Voltage V (BR) GSS 1G - 10/1A, VDS 0V - 30 V
Drain Cut-off Current IDSS VDS-- 720V, VGS =0V - - 100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - 10mA, VGS - ov 900 - - V
Gate Threshold Voltage Vth VDS = 10V, ID = 1mA 2.0 - 4.0 V
Drain-Source ON Resistance RDS (ON) VGS = 10V, ID = 3.0A - 2.3 2.5 n
Forward Transfer - -
A dmittance Istl VDS - 20V, ID - 3.0A 1.1 4.4 - S
Input Capacitance Ciss - 1200 -
Reverse Transfer C VDS = 25V, VGS = 0V 20 F
Capacitance rss f = lMHz - - p
Output Capacitance Coss - 120 -
Rise Time tr 10V n ID =3A V - 40 -
VGS 0V R
Turn-on Time t L= - 90 -
Switching on g, 66.70
Time uo ns
Fall Time tf - 60 -
VDD:200V
. VIN : tr, tf< 5ns
Turn-off Time toff Duty E 1%, tw= lO/zs - 200 -
Total Gate Charge (Gate-
. Qg . - 45 -
Source Plus Gate-Drain) VDD=.400V, VGs=10V, C
Gate-Source Charge Qgs ID = 5A - 25 - n
Gate-Drain ("Miller") Charge di - 20 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse
I - - - A
Current DR 5
Pulse Drain Reverse Current IDRP - - - 15 A
Diode Forward Voltage VDSF IDR = 5A, VGS = 0V - - - 1.9 V
Reverse Recovery Time trr IDR = 5A, VGS = 0V - 1300 - ns
Reverse Recovery Charge er dIDR/ dt=100A/ ,as - 11 - pd?
MARKING
T yd. Lot Number
K2717--- TYPE .
Month (Starting from Alphabet A)
IE Ll-
Ll Ll Year (Last Number of the Christian Era)
1998-11-12 2/5
TOSHIBA
2SK2717
ID - VDS
COMMON SOURCE 10
Tc=25°C
sz=4.25V
0 l 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
COMMON SOURCE Tc-- _ 55°C
VDs=20V
0 2 4 6 8 10
GATE-SOURCE VOLTAGE vos (V)
lstl - ID
COMMON SOURCE
VDS = 20V
Tc = - 55°C
FORWARD TRANSFER. ADMITTANCE
[stl (S)
0.1 0.3 0.5 1 3 5 10
DRAIN CURRENT ID (A)
1D (A)
DRAIN-SOURCE 0N RESISTANCE
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE VDS (V)
Ros (ON) (0)
ID - VDS
COMMON SOURCE 10
Tc=25°C
2 4.75
VGS=4.25V
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
COMMON SOURCE
Tc = 25°C
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
RDS (0N) - ID
COMMON
SOURCE
Te = 25°C
VGS= 10,15v
0.1 0.3 0.5 1 3 5 10
DRAIN CURRENT ID (A)
1998-11-12 3/5
TOSHIBA
2SK2717
RDS (0N) - Te
COMMON SOURCE
VGS = 1 0V
DRAINSOURCE 0N RESISTANCE
RDS(0N) <9)
-80 -4O 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
CAPACITANCE - VDS
CAPACITANCE C (pF)
COMMON SOURCE
VGS=0V Urss
f=lMHz
10 Tc=25°C
0.1 0.3 0.5 1 3 5 10 30 50 100
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN POWER DISSIPATION PD (W)
0 40 80 120 160 200
CASE TEMPERATURE Te (°C)
DRAIN REVERSE CURRENT [DR
GATE THRESHOLD VOLTAGE Vth
DRAIN-SOURCE VOLTAGE VDS
IDR - VDS
COMMON SOURCE
Tc = 25°C
Vgs=0, -IV
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
DRAIN-SOURCE VOLTAGE VDS (V)
Vth - Te
COMMON SOURCE
VDS= 10V
ID=1mA
-80 -40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
COMMON SOURCE
ID = 5A
Tc = 25°C
GATE-SOURCE VOLTAGE VGS (V)
10 20 30 40 50 60
TOTAL GATE CHARGE Qg (nC)
1998-11-12 4/5
TOSHIBA
2SK2717
DRAIN CURRENT ID (A)
rth (n) I Rth (ch-c)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE
SAFE OPERATING AREA
ID MAX. (PULSE) X
100pr)k.
ID MAX. (CONTINUOUS)
DC OPERATION
Tc = 25°C
yd. SINGLE
NONREPETITIVE
PULSE Tc=25°C
Curves must be derated
linearly with increase in
temperature.
VDSS MAX.
100 300 1000
DRAIN-SOURCE VOLTAGE VDS (V)
rth - tw
PDMII I I
Duty = t / T
Rth (em) = 2.78°C /W
100m 1 10
SINGLE PULSE
1m 10m
PULSE WIDTH tw (s)
EAS - Teh
t; 600
rs: 400
25 50 75 100 125 150
CHANNEL TEMPERATURE Tch (°C)
Fl IAR
-15V / \
o-CLI / \
VDD / \ VDS
TEST CIRCUIT WAVE FORM
Peak IAR=5A, RG=250 _L 2 Bv-oss
EAS-- -L-I-(B V
VDD=90V, L=43.6mH 2 VDSS- DD
1998-11-12 5/5
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