K246 ,N-channel MOS-FET2SK2467§K746I‘- IFOR CONSTANT CURRENT, IMPEDANCE Unit in mmCONVERTER AND DC-AC HIGH INPUTIMPFDANCF ..
K2500E70 , silicon bilateral voltage triggered switch
K2500F1 , silicon bilateral voltage triggered switch
K2500F1 , silicon bilateral voltage triggered switch
K2500G , silicon bilateral voltage triggered switch
K2698 , Silicon N-Channel MOSFET
KBMF01SC6 ,EMI FILTER AND LINE TERMINATION FOR PS/2 MOUSE OR KEYBOARD PORTSKBMFxxSC6®EMI FILTER AND LINE TERMINATIONA.S.D.™FOR PS/2 MOUSE OR KEYBOARD PORTSMAIN APPLICATIONEMI ..
KBP005M ,Bridge RectifiersFeatures• Surge overload rating: 50 amperespeak.• Reliable low cost construction utilizingmolded pl ..
KBP04 , SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A
KBP04M ,Bridge RectifiersFeatures• Surge overload rating: 50 amperespeak.• Reliable low cost construction utilizingmolded pl ..
KBP06 , SINGLE PHASE SILICON BRIDGE RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A
KBP06G ,Bridge Rectifiersvmmvemm
KBP005G Thru KBP10G
1.5 AMP GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
I
K246
N-channel MOS-FET
TOSHIBA ZSK246
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE
2SK246
FOR CONSTANT CURRENT, IMPEDANCE Unit in mm
CONVERTER AND DC-AC HIGH INPUT
5.1 MAX.
IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS .
0 High Breakdown Voltage : VGDs=-50v Ctl5 “H I .
0 High Input Impedance : IGss=lnA(Max.) (vas-- -30V) 0.45 . . ' E
L27 1.27
MAXIMUM RATINGS (Ta = 25°C) ' /
CHARACTERISTIC SYMBOL RATING UNIT I 1 , I' g
Gate-Drain Voltage VGDS -50 V -
Gate Current 10, 10 mA l. SOURCE
Drain Power Dissipation PD 300 mW g (te,,
Junction Temperature Tj 125 "C .
Storage Temperature Range Tstg -55--125 °C JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5F1C
Weight : 0.21g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Cut-off Current IGSS Vgs= -30V, Vns--0 - - -1.0 nA
Gate-Drain Breakdown - -
Voltage V (BR) GDS VDs--0, IG-- -100pA -50 - - V
. IDSS - -
Drain Current (Note) VDs=10V, VGS=0 1.2 - 14 mA
Gate-Source Cut-off Voltage VGS (OFF) VD5=10V, ID=0.1 PA -0.7 - -6.0 V
Forward Transfer
A dmittance IYfSI Irns - 10V, VGS - 0, f - lkHz 1.5 - - mS
Input Capacitance Ciss V133: 10V, VGs=O, f = 1MHz - 9.0 - pF
Reverse Transfer
Capacitance Crss VDG-- 10V, ID =0, f-- IMHz - 2.5 - pl?
Note .' IDSS Classification Y .' 1.2-3.0mA, GR : 2.6--6.5mA, BL .' 6--14mA
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
l implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-04-10 1/3
TOSHIBA
ZSK246
STATIC CHARACTERISTICS
COMMON SOURCE
Ta = 25°C
In (mA)
VDS = 10V - L5
- 4 - 2 O 20 40 60
GATE-SOURCE DRAIN-SOURCE VOLTAGE
VOLTAGE VGS (V) VDS (V)
ID - VDs (LOW VOLTAGE RIGION)
COMMON SOURCE
Ta = 25°C
DRAIN CURRENT 11) (mA)
0 1 2 3 4 5
DRAIN-SOURCE VOLTAGE VDS (V)
Ciss - VDS
COMMON SOURCE
VGS = 0
f= lMHz
Ta = 25''C
INPUT CAPACITANCE Ciss (pF)
0.5 1 3 10 3O 50
DRAIN-SOURCE VOLTAGE VDS (V)
FORWARD TRANSFER ADMITTANCE
REVERSE TRANSFER CAPACITANCE
IYfSI (mS)
Crss (PF)
ID - VGS
COMMON SOURCE
VDS = 10V
Ta = 25°C
DRAIN CURRENT 11) (mA)
-3.0 _2.5 -2.0 _1.5 -1.0 -0.5 o
GATE-SOURCE VOLTAGE VGS (V)
lstl - ID
COMMON
EMITTER
VDS = 10V
f= lkHz
Ta = 25''C
IDSS = 6.0mA
0 1 2 3 4 5 6
DRAIN CURRENT ID (mA)
Crss - VGD
COMMON SOURCE
0 f=1MHZ
Ta=25°C
-0.5 -1 -3 -10 -30 -50
GATE-DRAIN VOLTAGE VGD (V)
1997-04-10 2/3
TOSHIBA
FORWARD TRANSFER ADMITTANCE
Istl (mS)
DRAIN POWER DISSIPATION PD (mW)
Istl - IDSS
COMMON SOURCE
IDSS '. V135: 10V
VGS = 0
Istl .' VDS =10V
VGS = 0
f = IkHz
Ta = 25''C
3 10 30
DRAIN CURRENT IDss (mA)
50 100 150 200 250
AMBIENT TEMPERATURE Ta (°C)
GATESOURCE CUT-OFF VOLTAGE
VGS(OFF)
ZSK246
VGS (OFF) - IDss
COMMON SOURCE
IDSS : VDS = 10V
VGS = 0
VGS (OFF) '. VDs =10V
ID = 0.1 pA
Ta=25°C
1 3 10 30
DRAIN CURRENT IDss (mA)
1997-04-10 3/3
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