JDV2S41FS ,Variable capacitance diode for electronic tuning applicationsElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitRevers ..
JDV4P08U ,Diode Silicon Epitaxial Planar Type VCO for UHF Band RadioJDV4P08U TOSHIBA DIODE Silicon Epitaxial Planar Type JDV4P08U VCO for UHF Band Radio Unit: mm ..
JG0-0024NL , PULSEJACKTM 1xN Giggle-Up10
JG82855GME SL7VN , Intel® 855GM/855GME Chipset Graphics and Memory Controller Hub (GMCH)
JG82855GMESL7VN , Intel® 855GM/855GME Chipset Graphics and Memory Controller Hub (GMCH)
JG82855GME-SL7VN , Intel® 855GM/855GME Chipset Graphics and Memory Controller Hub (GMCH)
K9F1608W0A-TCB0 , 2M x 8 Bit NAND Flash Memory
K9F1G08U0M-PCB0 , 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PIB0 , 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VCB0 , 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VIB0 , 1Gb Gb 1.8V NAND Flash Errata
K9F2808U0B-DCB0 , 16M x 8 Bit NAND Flash Memory
JDV2S41FS
Variable capacitance diode for electronic tuning applications
JDV2S41FS TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
JDV2S41FS VCO for V/UHF Band Radio Low series resistance: rs = 0.2 Ω (typ.) High capacitance ratio: C2V / C10V = 2.5 (typ.) Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Marking Equivalent Circuit (top view) Unit: mm
Weight: 0.6 mg (typ.)
