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JDV2S10S
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio
JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S10S VCO for UHF Band Radio High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: Signal level when capacitance is measured: Vsig � 500 mVrms
Marking Unit: mm
Weight: 0.0011 g (typ.)
