JDV2S10FS ,Variable capacitance diode for electronic tuning applicationsElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitRevers ..
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JDV2S10FS
Variable capacitance diode for electronic tuning applications
JDV2S10FS TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10FS VCO for the UHF band High capacitance ratio: C0.5V / C2.5V = 2.55 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C) Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking Unit: mm
Weight: 0.0006 g (typ.)
