JDV2S05E ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band Unit: mm Sm ..
JDV2S05S ,Diode Silicon Epitaxial Planar Type VCO for UHF bandJDV2S05S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05S VCO for UHF band Unit: mm Hi ..
JDV2S06S ,Diode Silicon Epitaxial Planar Type, VCO for UHF Band RadioJDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio Unit: mm ..
JDV2S07FS ,Variable capacitance diode for electronic tuning applicationsJDV2S07FS TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07FS VCO for UHF Band Radio Unit: mm ..
JDV2S07S ,Diode Silicon Epitaxial Planar Type VCO for UHF Band RadioJDV2S07S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07S VCO for UHF Band Radio Unit: mm ..
JDV2S08FS , VCO for the UHF band
K9656M , IF Filter for Audio Applications
K9656M , IF Filter for Audio Applications
K9F1608W0A-TCB0 , 2M x 8 Bit NAND Flash Memory
K9F1G08U0M-PCB0 , 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PIB0 , 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VCB0 , 1Gb Gb 1.8V NAND Flash Errata
JDV2S05E
Diode Silicon Epitaxial Planar Type VCO for UHF band
JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E VCO for UHF band Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 Ω (typ.)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
C1V VR � 1 V, f � 1 MHz�
Note: Signal level when capacitance is measured. Vsig � 100 mVrms
Marking Unit: mm
Weight: 0.0014 g (typ.)
